D444 Mosfet

Part Number : D478, AOD478, AOI478

2020 popular 1 trends in Electronic Components & Supplies, Jewelry & Accessories, Women's Clothing, Consumer Electronics with D446 and 1. Discover over 155 of our best selection of 1 on AliExpress. General description: The AOD444/AOI444 combine advanced trench MOSFET technology with a low resistance package to provide extremely low RDS (ON). Those devices are suitable for use in PWM, load switching and general purpose applications. N-CHANNEL MOSFET TO-252.

Function : 100V, N-Channel MOSFET

Package : TO252, TO251A Type

Manufactures : Alpha and Omega Semiconductor

Image

General Description

The D478, AOD478, AOI478 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.

Pinout

Product Summary

1. VDS : 100V

Transistor Mosfet D444

2. ID(at VGS=10V) : 11A

3. RDS(ON)(at VGS=10V) : < 140mΩ

4. RDS(ON) (at VGS= 4.5V) : < 152mΩ

Official Homepage : http://www.aosmd.com/

D478 Datasheet

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 100 W

Tensión drenaje-fuente |Vds|: 150 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 20 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 4.6 V

Tiempo de elevación (tr): 5.5 nS

Conductancia de drenaje-sustrato (Cd): 70 pF

Persamaan Mosfet D444

Resistencia drenaje-fuente RDS(on): 0.094 Ohm

Empaquetado / Estuche: TO-252

Pengganti Mosfet D444

AOD4454 Datasheet (PDF)

0.1. aod4454.pdf Size:291K _aosemi

AOD4454150V N-Channel MOSFETGeneral Description Product SummaryVDS150VThe AOD4454 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 20Aextremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V)

0.2. aod4454.pdf Size:266K _inchange_semiconductor

isc N-Channel MOSFET Transistor AOD4454FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =150V(Min)DSSStatic Drain-Source On-Resistance: R =94m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

9.1. aod446.pdf Size:193K _aosemi

AOD446N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesVDS (V) = 75VThe AOD446 uses advanced trench technology andID = 10 A (VGS = 20V)design to provide excellent RDS(ON) with low gateRDS(ON)

9.2. aod442 aoi442.pdf Size:246K _aosemi

AOD442/AOI44260V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD442/AOI442 used advanced trench technology to 60V37Aprovide excellent RDS(ON) and low gate charge. Those ID (at VGS=10V)devices are suitable for use as a load switch or in PWM

9.3. aod448.pdf Size:193K _aosemi

AOD448N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD448 uses advanced trench technology and VDS (V) = 30Vdesign to provide excellent RDS(ON) with low gateID = 75A (VGS = 10V)charge. This device is suitable for use in PWM, loadRDS(ON)

9.4. aod442.pdf Size:246K _aosemi

9.5. aod442g.pdf Size:349K _aosemi

AOD442G60V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 60V Low RDS(ON) ID (at VGS=10V) 40A Logic Level Driving RDS(ON) (at VGS=10V)

9.6. aod444 aoi444.pdf Size:248K _aosemi

AOD444/AOI44460V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD444/AOI444 combine advanced trench MOSFET 60V12Atechnology with a low resistance package to provide ID (at VGS=10V)extremely low RDS(ON). Those devices are suitable for use

9.7. aod444.pdf Size:248K _aosemi

9.8. aod444.pdf Size:1741K _kexin

SMD Type MOSFETN-Channel MOSFETAOD444 (KOD444)TO-252Unit: mm+0.15 Features6.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 VDS (V) = 60V ID = 12 A (VGS = 10V) RDS(ON) 60m (VGS = 10V)D0.127 RDS(ON) 85m (VGS = 4.5V)+0.10.80-0.1max+ 0.12.3 0.60- 0.1+0.154.60 -0.15GS Absolute Maximum Ratings Ta = 25Parame

Harga Mosfet D444

9.9. aod446.pdf Size:265K _inchange_semiconductor

isc N-Channel MOSFET Transistor AOD446FEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 140m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

9.10. aod442. Chakravakam tamil episode. pdf Size:249K _inchange_semiconductor Bamboo fun install.

isc N-Channel MOSFET Transistor AOD442FEATURESDrain Current I = 37A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 20m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgeneral

9.11. aod442g.pdf Size:249K _inchange_semiconductor

isc N-Channel MOSFET Transistor AOD442GFEATURESDrain Current I = 40A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 18m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgenera

9.12. aod444.pdf Size:265K _inchange_semiconductor

Deus ex human revolution pc repack. isc N-Channel MOSFET Transistor AOD444FEATURESDrain Current I = 12A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 60m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

Otros transistores.. AOD421, AOD422, AOD423, AOD424, AOD425, AOD4286, AOD442, AOD444, IRF150, AOD446, AOD450, AOD4504, AOD454A, AOD456, AOD458, AOD464, AOD468.

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